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GaAs Gallium Arsenide Semicondutor Crystal Material
Feb 21, 2018

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgapsemiconductor with a Zinc blende crystal structure.

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide and others.

GaAs can be used for various transistor types: MESFET, HEMT (a type of FET), JFET, Heterojunction bipolar transistor (HBT), Solar cells and detectors, Light-emission devices, Fiber optic temperature measurement, Spin-charge converters etc.

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