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What Is Gallium Arsenide​(GaAs)?
Jun 04, 2018

Gallium arsenide is a compound of Group III-V compounds, a black-gray solid with a melting point of 1238°C. It is below 600°C, can be stable in the air, and is not attacked by non-oxidizing acids.

Is an important compound semiconductor material, with the germanium, silicon ratio, the band gap and electron mobility are relatively large, the device made with it has better frequency characteristics and high temperature characteristics. Used to make microwave semiconductor devices and semiconductor lasers. The germanium and arsenic were synthesized at high temperature and then made into single crystals.

There are a wide variety of semiconductor materials, ranging from simple substances to compounds, from inorganic materials to organic materials, and from single crystals to amorphous materials, as semiconductor materials. According to the chemical composition and structure of the material, semiconductors can be divided into elemental semiconductors such as silicon (Si) and germanium (Ge); binary compound semiconductors such as gallium arsenide (GaAs) and indium telluride (InSb); Compound semiconductors, such as GaAsAl, GaAsP; solid-solution semiconductors, such as Ge-Si, GaAs-GaP; glass semiconductors (also known as amorphous semiconductors), such as amorphous silicon, glassy oxide semiconductors; organic semiconductors, such as phthalocyanine, germanium Cyanine, polyacrylonitrile, etc.

In the 1950s, the production of semiconductor devices mainly used germanium single crystal materials. By the 1960s, due to the performance of silicon single crystal materials far surpassing germanium, semiconductor silicon has been widely used, and silicon has dominated the semiconductor materials. . The manufacture of large-scale integrated circuits is dominated by silicon single-crystal materials, and III-V compound semiconductors such as gallium arsenide, gallium phosphide, indium antimonide, etc. have also received increasing attention, especially GaAs. With the excellent characteristics of silicon and germanium that can operate at high temperature and frequency, it also has a larger band gap and electron mobility, and is suitable for manufacturing microwave body effect devices, high efficiency infrared light emitting diodes, and semiconductor lasers. Gallium arsenide is a promising semiconductor material. With the improvement of the manufacturing technology of large-scale integrated circuits, the research fields and objects of semiconductor chemistry will continue to expand.